Quantifying eigenstrain distributions induced by focused ion beam damage in silicon-Reference-Cited by-同舟云学术

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Quantifying eigenstrain distributions induced by focused ion beam damage in silicon

Published:2016-12 Issue: Volume:185 Page:47-49
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Korsunsky Alexander M.,Guénolé Julien,Salvati Enrico,Sui Tan,Mousavi Mahmoud,Prakash Arun,Bitzek Erik

Funder

EU FP7

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Micromechanics of Defects in Solids;Mura,1987

2. Evaluation of residual stresses and strains using the Eigenstrain reconstruction method;Jun;Int. J. Solids Struct.,2010

3. Determination of sub-surface stresses at inclusions in single crystal superalloy using HR-EBSD, crystal plasticity and inverse eigenstrain analysis;Kartal;Int. J. Solids Struct.,2015

4. The effect of eigenstrain induced by ion beam damage on the apparent strain relief in FIB-DIC residual stress evaluation;Salvati;Mater. Des.,2016

5. General formulation of pressure and stress tensor for arbitrary many-body interaction potentials under periodic boundary conditions;Thompson;J. Chem Phys.,2009

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