Growth of a 3C-SiC layer by carburization of silicon nanopillars
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference32 articles.
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1. Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars;Materials & Design;2021-05
2. Iron Carbidization on Thin-Film Silica and Silicon: A Near-Ambient-Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study;ACS Catalysis;2018-06-28
3. Ice-templated silicon foams with aligned lamellar channels;MRS Communications;2017-12
4. Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process;Materials Science;2017-08-04
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