Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates
Author:
Funder
Hibi Science Foundation
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. Photoelectrolysis of water to hydrogen in p-SiC/Pt and p-SiC/ n-TiO2 cells
3. Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation
4. High-Efficiency Electrochemical Hydrogen Evolution Based on Surface Autocatalytic Effect of Ultrathin 3C-SiC Nanocrystals
5. SiC photoelectrodes for a self-driven water-splitting cell
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1. Analysis of carrier recombination coefficients of 3C- and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC;AIP Advances;2023-08-01
2. Lotus leaf-like Ni-decorated SiC with combined superhydrophobicity and enhanced microwave absorption performance;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2022-10
3. Comparison of Vibration-Assisted Scratch Characteristics of SiC Polytypes (3C-, 4H- and 6H-SiC);Micromachines;2022-04-18
4. Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography;Journal of Electronic Materials;2022-01-16
5. Durable and efficient photoelectrochemical water splitting using TiO2 and 3C–SiC single crystals in a tandem structure;Solar Energy Materials and Solar Cells;2021-09
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