Fabrication of zinc stannate based all-printed resistive switching device-Reference-Cited by-同舟云学术

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Fabrication of zinc stannate based all-printed resistive switching device

Published:2016-03 Issue: Volume:166 Page:311-316
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Siddiqui Ghayas-ud-din,Ali Junaid,Doh Yang-Hoi,Choi Kyung Hyun

Funder

2015 scientific promotion program

Jeju National University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Carbon nanotubes – the route toward applications;Baughman;Science,2002

2. The rise of graphene;Geim;Nat. Mater.,2007

3. The potential environmental impact of engineered nanomaterials;Colvin;Nat. Biotechnol.,2003

4. Application of nanomaterials in two-terminal resistive-switching memory devices;Ouyang;Nano Rev.,2010

5. The missing memristor found;Strukov;Nature,2009

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2. Fully printed memristors made with MoS₂ and graphene water-based inks;Materials Horizons;2024

3. Amorphous Oxide Semiconductor Memristors: Brain-inspired Computation;Advanced Memory Technology;2023-10-09

4. Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices;Advanced Electronic Materials;2023-09-08

5. Temperature and frequency dependent dielectric capacitance and polarization performances of low dimensional perovskite based manganese stannate;Journal of Materials Science: Materials in Electronics;2023-09

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