Epitaxial growth and optical band gap variation of ultrathin ZnTe films-Reference-Cited by-同舟云学术

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Epitaxial growth and optical band gap variation of ultrathin ZnTe films

Published:2022-04 Issue: Volume:313 Page:131725
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Jay Kim Min,Jun Lee Kyeong,Don Kim Hyun,Jin Kim Hyuk,Ki Choi Byoung,Hak Lee In,Gwang Khim Yeong,Eun Heo Jin,Hyoung Chang Seo,Choi Eunjip,Jun Chang Young

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Perspective: Uniform switching of artificial synapses for large-scale neuromorphic arrays

2. Challenges in materials and devices for resistive-switching-based neuromorphic computing

3. Te-based chalcogenide materials for selector applications

4. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring ohmic contact of CdZnTe based device using a ZnTe:Cu film interlayer;Vacuum;2024-04

2. Electrical conductivity enhancement of epitaxially grown TiN thin films;Journal of the Korean Physical Society;2023-02-08

3. Undoped p-type ZnTe thin film and thin film transistor channel performance;Applied Physics A;2023-01-21

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