Temperature-dependent resistive switching behaviour of an oxide memristor-Reference-Cited by-同舟云学术

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Temperature-dependent resistive switching behaviour of an oxide memristor

Published:2021-11 Issue: Volume:303 Page:130451
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kumari Karuna,Majumder S.,Thakur Ajay D.,Ray S.J.

Funder

Department of Science and Technology

UGC DAE Consortium for Scientific Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures

2. Low-Temperature Characteristics of HfO_x-Based Resistive Random Access Memory

3. Charge transport and resistive switching in a 2D hybrid interface

4. The physics of manganites: Structure and transport

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2. Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology;ACS Applied Bio Materials;2024-07-08

3. Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application;Scientific Reports;2024-06-07

4. Influence of nano-clay platelet concentration on achieving a transition from write once read many (WORM) to complementary resistive switching (CRS) behaviour in organo-clay hybrid thin films for memory applications;Journal of Materials Science: Materials in Electronics;2024-06

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