Role of the spin-orbit coupling on the effective damping parameter in Y3Fe5O12/(Ag,W) bilayers explored through magnetoimpedance effect
Author:
Funder
CNPq
CAPES
FAPERN
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Highly compliant planar Hall effect sensor with sub 200 nT sensitivity
2. Effect of Substrate Temperature on Structural, Morphological, Magnetic, and Electrical Properties of Fe2CoSi Heusler Alloy Thin Films for Spin-Based Device Applications
3. Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances
4. Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications
5. Pyroelectric energy conversion with large energy and power density in relaxor ferroelectric thin films
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A strategy for more reliably obtaining Y3Fe5O12 thin films with both low damping and highly spin transparent surface;APL Materials;2024-08-01
2. Assessing the relaxation mechanisms contributions on magnetoimpedance effect in YIG/W bilayers;Journal of Physics D: Applied Physics;2022-03-01
3. Electrical detection of ferromagnetic resonance in bulk YIG sample covered with a layer of silver paint;AIP Advances;2022-03-01
4. Directional Field-Dependence of Magnetoimpedance Effect on Integrated YIG/Pt-Stripline System;Sensors;2021-09-13
5. Magnetoimpedance of Epitaxial Y3Fe5O12 (001) Thin Film in Low-Frequency Regime;ACS Applied Materials & Interfaces;2020-08-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3