Formation of silicon carbide nanowire on insulator through direct wet oxidation-Reference-Cited by-同舟云学术

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Formation of silicon carbide nanowire on insulator through direct wet oxidation

Published:2017-06 Issue: Volume:196 Page:280-283
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Phan Hoang-Phuong,Ina Ginnosuke,Dinh Toan,Kozeki Takahiro,Nguyen Tuan-Khoa,Namazu Takahiro,Qamar Afzaal,Dao Dzung Viet,Nguyen Nam-Trung

Funder

Australian Research Council

Australian National Fabrication Facility

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. The piezoresistive effect of SiC for MEMS sensors at high temperatures: a review;Phan;J. Microelectromech. Syst.,2015

2. Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: a review;Senesky;IEEE Sensors J.,2009

3. Advances in silicon carbide science and technology at the micro- and nanoscales;Maboudian;J. Vac. Sci. Technol. A,2013

4. A silicon carbide lollipop;Ferraro;Materialstoday,2015

5. Orientation dependence of the pseudo-Hall effect in p-type 3C-SiC four-terminal devices under mechanical stress;Phan;RSC Adv.,2015

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1. Ultrahigh growth rate-induced thick 3C-SiC heteroepitaxial layers on 4H-SiC and its oxidation characteristics;Vacuum;2024-11

2. Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses;Materials Science in Semiconductor Processing;2024-04

3. Ultrahigh Growth Rate-Induced Thick 3c-Sic Heteroepitaxial Layers on 4h-Sic and its Oxidation Characteristics;2024

4. Catalytic synthesis of SiC nanowires in an open system;Journal of the American Ceramic Society;2019-01-22

5. Superior Robust Ultrathin Single-Crystalline Silicon Carbide Membrane as a Versatile Platform for Biological Applications;ACS Applied Materials & Interfaces;2017-11-20

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