Solution-processed In2S3 nanosheet arrays for CuInS2 thin film solar cells-Reference-Cited by-同舟云学术

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Solution-processed In2S3 nanosheet arrays for CuInS2 thin film solar cells

Published:2021-05 Issue: Volume:290 Page:129490
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Chen Wangwei,Wan Zhiyang,Cao Wenbo,Dong Chao,Chen Junwei,Liu Rong,Zhu Liangxin,Zhang Xueqiang,Wang Mingtai

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Incorporation of an efficient β-In2S3 thin film as window material into CdTe photovoltaic devices

2. Toward an all-Atomic Layer Deposition (ALD) process for Cu(In,Ga)(S,Se)2 (CIGS)-type solar cell

3. Role of elemental intermixing at the In2S3/CIGSe heterojunction deposited using reactive RF magnetron sputtering

4. Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

5. Fabrication of selenization-free superstrate-type CuInS2 solar cells based on all-spin-coated layers

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The transformation of In2S3 film from flower-like to net-like structure by tunable microwave reaction for buffer layer in CuInS2/TiO2 solar cells;Materials Science in Semiconductor Processing;2024-08

2. Optimization of Carrier Concentration in Cu₂₂Sn₁₀S₃₂ through In- and Zn-Doping for Enhanced Thermoelectric Performance;ACS Applied Energy Materials;2024-01-04

3. Constructing self-assembled microtubular structured Zn–In–S and modulation mechanism towards efficient photocatalytic degradation of tetracycline;Journal of Cleaner Production;2023-01

4. In situ vulcanization synthesis of CuInS₂ nanosheet arrays for a memristor with a high on–off ratio and low power consumption;Journal of Materials Chemistry C;2023

5. Charge dynamics in CuInS2 photovoltaic devices with In2S3 as buffer layer;Materials Chemistry and Physics;2022-04

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