Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films-Reference-Cited by-同舟云学术

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Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

Published:2007-07 Issue:18 Volume:61 Page:3867-3869
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Xue Shoubin,Zhuang Huizhao,Li Baoli,Hu Lijun,Zhang Shiying,Xue Chengshan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

2. Gallium Nitride Nanowire Nanodevices

3. Synthesis and characterization of a nanostructured gallium nitride–PMMA composite

4. Preparation of GaN Single Crystals Using a Na Flux

5. Logic Gates and Computation from Assembled Nanowire Building Blocks

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scallion-Root-Shaped GaN Nanorods Grown by Two-Step Method and Study on their Properties;Advanced Materials Research;2013-01

2. Non-destructive Evaluations of Gallium Nitride Nanowires;Materials Letters;2010-08

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