Epitaxial growth and thermal stability of thin Pd 2 Si films on (001), (011) and (111) Si-Reference-Cited by-同舟云学术

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Epitaxial growth and thermal stability of thin Pd 2 Si films on (001), (011) and (111) Si

Published:1995-06 Issue:1-2 Volume:261 Page:107-114
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen J.F.,Chen L.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Self-aligned silicides or metals for very large scale integrated circuit applications

2. Resistivity Lowering of Palladium Silicide Film due to Post-Annealing

3. Palladium Silicide Ohmic Contacts to Shallow Junctions in Silicon

4. Silicide formation

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1. Heterostructural Interface Modelling;Materials Research Foundations;2019-10-25

2. Interfacial Silicide Formation and Stress Evolution during Sputter Deposition of Ultrathin Pd Layers on a-Si;ACS Applied Materials & Interfaces;2019-09-24

3. Exploring Pd–Si(001) and Pd–Si(111) thin-film reactions by simultaneous synchrotron X-ray diffraction and substrate curvature measurements;Thin Solid Films;2013-03

4. Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer;Japanese Journal of Applied Physics;2010-05-20

5. Low Temperature Metal-Induced Lateral Crystallization of Si1-xGexUsing Silicide/Germanide-Forming-Metals;Japanese Journal of Applied Physics;2010-04-20

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