Reaction of amorphous Si with cobalt silicide before disilicide formation for reducing Si consumption in SIMOX-Reference-Cited by-同舟云学术

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Reaction of amorphous Si with cobalt silicide before disilicide formation for reducing Si consumption in SIMOX

Published:1997-10 Issue: Volume:308-309 Page:570-574
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Maa Jer-Shen,Teng Hsu Sheng,Ulrich Bruce,Peng Chien-Hsiung

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. S. Wong, D. Bradbury, D. Chen and K. Chiu, IEDM Tech. Digest, (1984) 634.

2. H. Kotaki, M. Nakano, Y. Takegawa, S. Kakimoto, Y. Mori, K. Mitsuhashi, J. Takagi, S. Tsuchimoto and Y. Akagi, IEDM Tech. Digest, (1993) 839.

3. J.-S. Maa and S.T. Hsu, in R. Tung, K. Maex, P. Pellegrini and L. Allen (eds.), Mater. Res. Soc. Symp. Proc., Vol. 402, Mater. Res. Soc., Pittsburgh, 1996, p.185.

4. S.S. Lau and W.F. van der Weg, Thin Films, Interdiffusion and Reactions, The Electrochemical Society, Pennington, New Jersey, 1978, p. 433.

5. C.-D. Lien, M. Finetti, M.-A. Nicolet and S.S. Lau, J. Electron. Mater., 13 (1984) 5678.

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1. Selective deposition of TiSi 2 on ultra-thin silicon-on-insulator (SOI) wafers;Thin Solid Films;1998-11

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