Molecular beam epitaxy synthesis of Si1−yCy and Si1−x−yGexCy alloys and Ge islands using an electron cyclotron resonance argon/methane plasma

Author:

Baribeau J.-M.,Lockwood D.J.,Balle J.,Rolfe S.J.,Sproule G.I.,Moisa S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. See for example papers in Proceedings of the 7th International Symposium on Silicon Molecular Beam Epitaxy, J.-M. Baribeau (Ed.), Thin Solid Films 321 (1998).

2. See for example papers in Group IV Heterostructures, Physics and Devices (Si, Ge, C, a-Sn), J.-M. Lourtioz (Ed.), Thin Solid Films 294 (1997).

3. Silicon‐based group IV heterostructures for optoelectronic applications

4. Noncontact semiconductor wafer characterization with the terahertz Hall effect

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