Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)-Reference-Cited by-同舟云学术

Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)

Published:2000-04 Issue:2 Volume:365 Page:251-263
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Coltrin Michael E.,Ho Pauline,Moffat Harry K.,Buss Richard J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference70 articles.

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3. The OVEND Program for Batch LPCVD Reactors, Sandia National Laboratories Report SAND93-8461;Grcar,1993

4. Unimolecular Reactions;Holbrook,1996

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