Raman scattering studies of amorphous SixGe1−x:H alloy films produced by hot-filament assisted chemical vapour deposition technique-Reference-Cited by-同舟云学术

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Raman scattering studies of amorphous SixGe1−x:H alloy films produced by hot-filament assisted chemical vapour deposition technique

Published:1997-06 Issue:1-2 Volume:302 Page:102-107
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kumbhar A.A.,Kshirsagar S.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

2. Theoretical small-signal performance of Si/SiGe/Si HBT

3. Room‐temperature measurements of strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma‐enhanced chemical vapor deposition

4. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K

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