Surface condition effects of the inter-metal dielectrics on interconnect aluminum film properties-Reference-Cited by-同舟云学术

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Surface condition effects of the inter-metal dielectrics on interconnect aluminum film properties

Published:2001-12 Issue:1-2 Volume:401 Page:273-278
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Sam-Dong,Rhee Jin-Koo,Hwang In-Seok,Park Hyung-Moo,Park Hyun-Chang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Residue‐Free Etching of the Al‐Si‐Cu Alloy Employing Magnetron Reactive Ion Etching

2. Characterization and Residue Elimination of Hot Aluminum Etching in a Transformer Coupled Plasma Etcher

3. Grain collapses in strained aluminum thin films

4. E.G. Clogen, S. Greco, N. Gerco, J.F. White, Proceedings of the 11th International IEEE VLSI Multilevel Interconnection Conference, 284 (1994).

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