Optimization of the i-layer width of Cr-a-Si:H PIN X-ray detectors-Reference-Cited by-同舟云学术

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Optimization of the i-layer width of Cr-a-Si:H PIN X-ray detectors

Published:2001-09 Issue:1-2 Volume:396 Page:237-241
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Estrada M.,Cerdeira A.,Leyva A.,Carreño M.N.P.,Pereyra I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. R.L. Weisfield, in: IEDM Tech. Dig., International Electron Device Meeting, San Francisco, USA, Sony Elect. Pub. Services, file 02_1.pdf, 6–9 December 1998.

2. P-I-N diodes on high deposition rate thick a-Si:H layers from pure SiH4

3. Charged particle detectors based on high quality amorphous silicon deposited with hydrogen or helium dilution of silane

4. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

5. K. Aflatooni, A. Nathan, R. Hornser, I.A. Cunningham, S.G. Chamberlain, in: IEDM Tech. Dig., International Electron Device Meeting, Washington DC, USA, Sony Elect. Pub. Services, file 08_4.pdf, 7–10 December 1997.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic spectrometry update. X-ray fluorescence spectrometry;Journal of Analytical Atomic Spectrometry;2002-09-12

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