Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Defect Evaluation of Heavily P-Doped Si Epitaxial Films Grown at Low Temperature
2. Very low temperature (250 °C) epitaxial growth of silicon by glow discharge of silane
3. Very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH4-PH3-H2Reactants for Bipolar Devices
4. Etching Effect of Hydrogen Plasma on Electron Cyclotron Resonance-Chemical Vapor Deposition and Its Application to Low Temperature Si Selective Epitaxial Growth
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1. Effect of plasma ion etching on Si nano wires towards superhydrophobicity;Materials Today: Proceedings;2016
2. The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature – An electron microscopic study;Journal of Non-Crystalline Solids;2007-08
3. Poly-Si films prepared by rapid thermal CVD on boron and phosphorus silicate glass coated ceramic substrates;Thin Solid Films;2006-07
4. Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth;Materials Science Forum;2005-01
5. Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma;Journal of Materials Science Letters;2003
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