Selective growth of SiGe quantum dots on hydrogen-passivated Si(100) surfaces-Reference-Cited by-同舟云学术

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Selective growth of SiGe quantum dots on hydrogen-passivated Si(100) surfaces

Published:2003-03 Issue:1-2 Volume:428 Page:144-149
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Thanh V.Le,Ngo Tam T.T.,Bui Huy,Bouchier D.,Le Tuyen T.T.,Phan Khoi H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. For a recent review, see, for example, P.M. Petroff and G. Mederios-Riberio, MRS Bulletin Vol. 21 (4), (1996) 50 and references therein

2. Quantum Semiconductor Structures;Weisbuch,1991

3. Excitonic luminescence from locally grown SiGe wires and dots

4. Optical anisotropy in wire‐geometry SiGe layers grown by gas‐source selective epitaxial growth technique

5. Growth of SiGe quantum wires and dots on patterned Si substrates

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1. Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces;AIP Advances;2018-05

2. Improvement of Charge Transportation in Si Quantum Dot-Sensitized Solar Cells Using Vanadium Doped TiO₂;Journal of Nanoscience and Nanotechnology;2016-05-01

3. Enhanced photoelectrochemical water splitting from Si quantum dots/TiO2 nanotube arrays composite electrodes;Materials Research Bulletin;2015-06

4. Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells;International Journal of Precision Engineering and Manufacturing;2014-02

5. The improvement on the performance of quantum dot-sensitized solar cells with functionalized Si;Thin Solid Films;2013-11

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