Advanced excimer-laser crystallization process for single-crystalline thin film transistors-Reference-Cited by-同舟云学术

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Advanced excimer-laser crystallization process for single-crystalline thin film transistors

Published:2003-03 Issue:1-2 Volume:427 Page:77-85
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ishihara Ryoichi,van der Wilt Paul Ch.,van Dijk Barry D.,Burtsev Artyom,Metselaar J.W.,Beenakker C.I.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

2. R. Ishihara, Technical Digest of AM-LCD 01, 259

3. Sequential lateral solidification of thin silicon films on SiO2

4. A. Hara, F. Takei, K. Yoshino, K. Suga, N. Sasaki, Technical Digest of AM-LCD 01, 227

5. Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors

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