Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. S. Madhavi, V. Venkataraman, C.W. Liu, J.C. Sturm, Device Res. Conf., (1996) and references therein.
2. Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons
3. Power loss by two‐dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening
4. Measurement of the electron velocity-field characteristic in modulation-doped structures using the geometrical magnetoresistance method
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007
2. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal–melt interface using in situ monitoring system;Journal of Crystal Growth;2001-04
3. High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures;Journal of Applied Physics;2001-02-15
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