Growth and characterization of IV–VI semiconductor heterostructures on (100) BaF2-Reference-Cited by-同舟云学术

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Growth and characterization of IV–VI semiconductor heterostructures on (100) BaF2

Published:1998-06 Issue:1-2 Volume:323 Page:126-135
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chao I-Na,McCann Patrick J,Yuan Wei-Li,O'Rear Edgar A,Yuan Shu

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Liquid phase epitaxy-grown PbSnSeTe/PbSe double heterostructure diode lasers;Feit;Infrared Phys. Tech.,1996

2. Diode laser harmonic spectroscopy applied to in situ measurements of atmospheric trace molecules;Loewenstein;J. Quant. Spectrosc. Radiat. Transfer,1988

3. Biomedical applications of tunable diode laser spectrometry;Lee;Ann. Biomed. Eng.,1994

4. Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers;Feit;Appl. Phys. Lett.,1996

5. Distributed feedback quantum cascade lasers;Faist;Appl. Phys. Lett.,1997

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