Extended stable junction regions in CuInSe2 thin films by electric field application-Reference-Cited by-同舟云学术

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Extended stable junction regions in CuInSe2 thin films by electric field application

Published:2003-05 Issue: Volume:431-432 Page:284-288
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Gartsman Konstantin,Cahen David,Scheer Roland,Gavilanes Perez Isabel

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cells

2. Stabilization of Ternary Compounds via Ordered Arrays of Defect Pairs

3. Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe 2 Crystals

4. Room temperature, local tailoring of electronic properties of Hg0.3Cd0.7Te by applying an external electric field

5. Electronic effects of ion mobility in semiconductors: Semionic behaviour of CuInSe2

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Chalcogenide Photovoltaics;2011-02-25

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