Effect of hydrogen dilution on the growth of nanocrystalline silicon films at high temperature by using plasma-enhanced chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. Control of the initial stage of nanocrystallite silicon growth monitored by in-situ spectroscopic ellipsometry
2. Effects of Addition of SiF4During Growth of Nanocrystalline Silicon Films Deposited at 100°C by Plasma-Enhanced Chemical Vapor Deposition
3. Control of silicon network structure in plasma deposition
4. Crystalline Fraction of Microcrystalline Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Pulsed Silane Flow
5. Role of Atomic Hydrogen During Growth of Hydrogenated Amorphous Silicon in the “Chemical Annealing”
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