Hydrogen-radical durability of TiO2 thin films for protecting transparent conducting oxide for Si thin film solar cells-Reference-Cited by-同舟云学术

Hydrogen-radical durability of TiO2 thin films for protecting transparent conducting oxide for Si thin film solar cells

Published:2003-04 Issue:1-2 Volume:430 Page:253-256
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Natsuhara H.,Ohashi T.,Ogawa S.,Yoshida N.,Itoh T.,Nonomura S.,Fukawa M.,Sato K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. K. Yamamoto, M. Yoshimi, T. Tawada, S. Fukuda, T. Sawada, T. Meguro, H. Takata, T. Suezaki, Y. Koi, K. Hayashi, T. Suzuki, A. Nakajima, Tech. Dig. 12th International Photovoltaic Science and Engineering Conference, Jeju, (2001) 547

2. High rate growth of microcrystalline silicon at low temperatures

3. Surface microstructures of ZnO coated SnO2: F films

4. Summary of research in NEDO Cat-CVD project in Japan

5. SnO2 thin films prepared by ion beam induced CVD: preparation and characterization by X-ray absorption spectroscopy

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