The effect of low dielectric polymer thickness on the electromigration characteristics of Al(1% Cu–0.5% Si) thin films-Reference-Cited by-同舟云学术

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The effect of low dielectric polymer thickness on the electromigration characteristics of Al(1% Cu–0.5% Si) thin films

Published:2001-02 Issue:1-2 Volume:382 Page:222-229
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yoo Sehoon,Eun Byung Soo,Kim Young-Ho,Chung Yong-Chae

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. R.H. Havemann, M.K. Jain, R.S. List, A.R. Ralston, W-Y. Shih, C. Jin, M.C. Chang, E.M. Zielinski, G.A. Dixit, A. Singh, S.W. Russell, J.F. Gaynor, A.J. McKerrow, W.W. Lee, Low-Dielectric Constant Materials 4, Symposium Proceeding 511, April 14–16, in: C. Chiang, P.S. Ho, T.-M. Lu, J.T. Wetzel, (Eds.), Materials Research Society, San Francisco, USA, 1998 p. 3.

2. Particle-Packing Phenomena and Their Application in Materials Processing

3. Integration of Low-k Dielectric Materials Into Sub-0.25-μm Interconnects

4. High-Resolution-Electron-Microscopy Investigation of Nanosize Inclusions

5. M.T. Bohr, IEDM Tech. Dig. (1995) 241.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromigration in ULSI interconnects;Materials Science and Engineering: R: Reports;2007-10

2. Miniaturization of a Thermally Driven Ni|Si Bimorph;Japanese Journal of Applied Physics;2003-07-15

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