InAs/GaAs multiple quantum dot structures grown by LP-MOVPE-Reference-Cited by-同舟云学术

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InAs/GaAs multiple quantum dot structures grown by LP-MOVPE

Published:2000-12 Issue:1-2 Volume:380 Page:101-104
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Pangrác J,Oswald J,Hulicius E,Melichar K,Vorlı́ček V,Drbohlav I,Šimeček T

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Self organization phenomena of quantum dots grown by metalorganic chemical vapour deposition

2. Interface Characterization of Semiconductor Quantum Nanostructures

3. J. Humlı́ček, Private communication, 2000.

4. Study of InAs quantum dots in GaAs prepared on misoriented substrates

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Competition between strain and confinement effects on the crystalline quality of InAs/GaAs (001) quantum dots probed by Raman spectroscopy;Journal of Raman Spectroscopy;2012-10-01

2. Enhanced 1.3 µm luminescence from InGaAs self-assembled quantum dots with a GaAsN strain-compensating layer;Semiconductor Science and Technology;2011-06-08

3. InGaAs quantum dots grown with GaP strain compensation layers;Journal of Applied Physics;2004-05-15

4. Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2002-03

5. Photovoltage spectroscopy of InAs/GaAs quantum dot structures;Journal of Applied Physics;2002

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