Topographic analysis of silicon nanoparticles-based electroluminescent devices-Reference-Cited by-同舟云学术

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Topographic analysis of silicon nanoparticles-based electroluminescent devices

Published:2010-10 Issue:1-3 Volume:174 Page:123-126
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Morales-Sánchez A.,Barreto J.,Domínguez C.,Aceves M.,Leyva K.M.,Luna-López J.A.,Carrillo J.,Pedraza J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Pulsed electroluminescence in silicon nanocrystals-based devices fabricated by PECVD

2. Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

3. DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

4. Silicon Nanocrystal Field-Effect Light-Emitting Devices

5. Electroluminescence and transport properties in amorphous silicon nanostructures

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Blue Electroluminescence in SRO-HFCVD Films;Nanomaterials;2021-04-08

2. Production of nano-dimensional crystalline silicon on fast cyclic compression setup;Journal of Physics: Conference Series;2018-11

3. Floating substrate luminescence from silicon rich oxide metal-oxide-semiconductor devices;Thin Solid Films;2013-03

4. Physical and biological properties of silicon nanopowders obtained by the chemicothermal method;Nanotechnologies in Russia;2013-02

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