GaN MSM photodetectors with TiW transparent electrodes-Reference-Cited by-同舟云学术

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GaN MSM photodetectors with TiW transparent electrodes

Published:2004-09 Issue:1 Volume:112 Page:25-29
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Wang C.K.,Chang S.J.,Su Y.K.,Chang C.S.,Chiou Y.Z.,Kuo C.H.,Lin T.K.,Ko T.K.,Tang J.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

2. High-responsivity submicron metal-semiconductor-metal ultraviolet detectors

3. Nitride-based 2DEG photodetectors with a large AC responsivity

4. Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

5. High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

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1. Vertical asymmetric metal-semiconductor-metal photodiode based on β-Ga2O3 thin films fabricated via solution process for arc discharge detection;Journal of Alloys and Compounds;2023-08

2. Mg-Doped Nickel Oxide as Efficient Hole-Transport Layer for Perovskite Photodetectors;The Journal of Physical Chemistry C;2021-07-16

3. Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors;Laser & Photonics Reviews;2020-12-03

4. Orthogonal Chemical Functionalization of Au/SiO2/TiW Patterned Substrates;Langmuir;2020-11-30

5. Performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contact;Superlattices and Microstructures;2020-02

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