HOPG surface irradiated by metal cluster complex ions-Reference-Cited by-同舟云学术

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HOPG surface irradiated by metal cluster complex ions

Published:2008-02 Issue:1-3 Volume:148 Page:132-135
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Teranishi Yoshikazu,Kondou Kouji,Mizota Takeshi,Fujiwara Yukio,Kushino Akihiro,Kobayasi Youhei,Nakamura Kazumasa,Ishizuka Masanori,Yokosawa Tsuyoshi,Nonaka Hidehiko

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. A study of the secondary‐ion yield change on the GaAs surface caused by the O+2 ion‐beam‐induced rippling

2. The complex formation of ripples during depth profiling of Si with low energy, grazing oxygen beams

3. Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment

4. Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

5. International Technology Roadmap for Semiconductors, 2001 ed., Semiconductor Industry Association, 2001.

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