Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity
2. Advances in plasma-enhanced chemical vapor deposition of silicon films at low temperatures
3. Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
4. Surface-sensitive Raman scattering study on a-Si:H network formation process during deposition and H2 plasma annealing
5. Effect of H2 dilution on the surface composition of plasma-deposited silicon films from SiH4
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