Band gap engineering of indium zinc oxide by nitrogen incorporation-Reference-Cited by-同舟云学术

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Band gap engineering of indium zinc oxide by nitrogen incorporation

Published:2014-09 Issue: Volume:187 Page:83-88
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ortega J.J.,Aguilar-Frutis M.A.,Alarcón G.,Falcony C.,Méndez-García V.H.,Araiza J.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

1. Characteristics of indium zinc oxide thin films prepared by direct current magnetron sputtering for flexible solar cells

2. Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system

3. Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings

4. High optical quality IZO (In2Zn2O5) thin films by PLD – A novel development for III–V opto-electronic devices

5. High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

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