The role of the substrate in the high energy boron implantation damage recovering-Reference-Cited by-同舟云学术

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The role of the substrate in the high energy boron implantation damage recovering

Published:2009-03 Issue: Volume:159-160 Page:168-172
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Mica I.,Di Piazza L.,Laurin L.,Mariani M.,Mauri A.G.,Polignano M.L.,Ricci E.,Sammiceli F.,Spoldi G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. S.M. Sze, VLSI Technology, 2nd ed., McGraw-Hill Book Company (1988) p. 355.

2. DRIP XII;Polignano,2007

3. Processing and Characterization of 300 mm Argon-Annealed Wafers

4. The engineering of intrinsic point defects in silicon wafers and crystals

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1. Modeling the Early Stages of Oxygen Agglomeration;ECS Transactions;2010-11-23

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