Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate-Reference-Cited by-同舟云学术

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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Published:2012-06 Issue:11 Volume:177 Page:882-886
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Salman S.,Folliot H.,Le Pouliquen J.,Chevalier N.,Rohel T.,Paranthoën C.,Bertru N.,Labbé C.,Letoublon A.,Le Corre A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Nanostructured thermoelectrics

2. Thin-film thermoelectric devices with high room-temperature figures of merit

3. Nanostructured thermoelectric materials

4. Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers

5. AlGaAs superlattice microcoolers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of temperature and ridge-width on the lasing characteristics of InAs/InP quantum-dash lasers: A thermal analysis view;Optics & Laser Technology;2018-01

2. Thermal coefficient of InP-based quantum dot laser from cavity-mode measurements;Infrared Physics & Technology;2015-01

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