Author:
Gutt T.,Małachowski T.,Przewłocki H.M.,Engström O.,Bakowski M.,Esteve R.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Photoelectrical measurements of the local value of the contact potential difference in the metal–insulator semiconductor (MIS) structures;Kudla;Thin Solid Films,2004
2. Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al–SiO2–Si and poly–Si–SiO2–Si structures;Przewlocki;Thin Solid Films,2008
3. W. Rzodkiewicz, Elipsometric and Raman investigation of mechanical stress in dielectric and semiconductor substrate of an MOS structure, XLI Congress of Physicists, 4–9 September, Lublin, Poland, 2012, in press.
4. Advances in SiC power MOSFET technology;Dimitrijev;Microelncs Reliab.,2003
5. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films;Hijikata;Appl. Surf. Sci.,2001
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