Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors

Author:

Gutt T.,Małachowski T.,Przewłocki H.M.,Engström O.,Bakowski M.,Esteve R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Photoelectrical measurements of the local value of the contact potential difference in the metal–insulator semiconductor (MIS) structures;Kudla;Thin Solid Films,2004

2. Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al–SiO2–Si and poly–Si–SiO2–Si structures;Przewlocki;Thin Solid Films,2008

3. W. Rzodkiewicz, Elipsometric and Raman investigation of mechanical stress in dielectric and semiconductor substrate of an MOS structure, XLI Congress of Physicists, 4–9 September, Lublin, Poland, 2012, in press.

4. Advances in SiC power MOSFET technology;Dimitrijev;Microelncs Reliab.,2003

5. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films;Hijikata;Appl. Surf. Sci.,2001

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability;IEEE Transactions on Electron Devices;2020-01

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