Raman scattering investigations on disorder and recovery induced by low and high energy ion irradiation on 3C-SiC-Reference-Cited by-同舟云学术

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Raman scattering investigations on disorder and recovery induced by low and high energy ion irradiation on 3C-SiC

Published:2021-11 Issue: Volume:273 Page:115452
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Sreelakshmi N.,Amirthapandian S.,Umapathy G.R.,David C.,Srivastava S.K.,Ojha S.,Panigrahi B.K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference71 articles.

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2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review;Casady;High-Temp. Electron.,1998

3. A silicon carbide room-temperature single-photon source;Castelletto;Nat. Mater.,2013

4. Radiation resistance of silicon carbide schottky diode detectors in D-T fusion neutron detection;Liu;Sci. Rep.,2017

5. Handbook of SiC properties for fuel performance modeling;Snead;J. Nucl. Mater.,2007

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1. Investigations on ion irradiation induced strain and structural modifications in 3C–SiC;Materials Science in Semiconductor Processing;2024-04

2. Reactions mechanism and mechanical properties of a SiCf/SiC joint affected by Cu/Ni/Ti elements and inhomogeneous composites;Journal of the European Ceramic Society;2024-03

3. Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations;Surfaces and Interfaces;2023-12

4. Morphological and microstructural evolutions of chemical vapor reaction-fabricated SiC under argon ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-08

5. Optical spectroscopy study of damage in ion-irradiated 3C-SiC epilayers on a silicon substrate;Journal of Applied Physics;2023-05-19

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