High transconductance nitride MOSHFETs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. 0.12-μm gate III-V nitride HFET's with high contact resistances
2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
3. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
4. DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
5. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
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