ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates-Reference-Cited by-同舟云学术

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ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

Published:2005-05 Issue:2 Volume:119 Page:202-205
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lin T.K.,Chang S.J.,Su Y.K.,Chiou Y.Z.,Wang C.K.,Chang S.P.,Chang C.M.,Tang J.J.,Huang B.R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Electrical and optical proprieties of photodiodes based on ZnSe material

2. Time response analysis of ZnSe-based Schottky barrier photodetectors

3. Transparent TiN Electrodes in GaN Metal–Semiconductor–Metal Ultraviolet Photodetectors

4. ZnCdSeTe-based orange light-emitting diode

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1. MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics;Semiconductor Science and Technology;2024-08-12

2. Synthesis and characterization of indium-doped ZnO nanoparticles by coprecipitation method for highly photo-responsive UV light sensors;Sensors International;2024

3. Photo-response in chemically synthesized ZnSe nanorod for its application as photosensor;Physica Scripta;2023-10-12

4. Metal–Semiconductor–Metal–ZnS/GaP Detectors for the UV and Visible Spectrum with Electrically Tunable Spectral Photosensitivity;Journal of Communications Technology and Electronics;2023-09

5. Metal–semiconductor–metal detectors ZnS/GaP for the ultraviolet and visible part of the spectrum with electrically tunable spectral photosensitivity;Радиотехника и электроника;2023-09-01

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