Modelisation of optoelectronic device based on Si/SiO2 emitting red light-Reference-Cited by-同舟云学术

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Modelisation of optoelectronic device based on Si/SiO2 emitting red light

Published:2005-12 Issue: Volume:124-125 Page:479-482
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Abdi-Ben Nasrallah S.,Sfina N.,Bouazra A.,Said M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Resonant tunneling in semiconductor double barriers

2. Tunnelling-based SRAM

3. Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure

4. Resonant tunneling in CdTe/Cd1−xMgxTe double-barrier single-quantum-well heterostructures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of Si and SiO2 in Optoelectronic Device Fabrication;Journal of Molecular Structure;2024-11

2. Modelling of strained ZnSSe on relaxed ZnSSe-based structures for blue light emission;Physica E: Low-dimensional Systems and Nanostructures;2009-02

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