Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation-Reference-Cited by-同舟云学术

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Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

Published:2005-12 Issue: Volume:124-125 Page:440-443
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Chow C.F.,Wong S.P.,Gao Y.,Ke N.,Li Q.,Cheung W.Y.,Lourenco M.A.,Homewood K.P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Room‐temperature electroluminescence from Er‐doped crystalline Si

2. On the origin of the 1.5 μm luminescence in ion beam synthesized β‐FeSi2

3. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

4. Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si

5. An efficient room-temperature silicon-based light-emitting diode

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions;Thin Solid Films;2013-06

2. Influence of Cr+ ion implantation and pulsed ion-beam annealing on the formation and optical properties of Si/CrSi2/Si(111) heterostructures;Technical Physics;2010-07

3. Photoresponse of β-FeSi2 precipitates in a silicon waveguide;LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings;2007-10

4. Structures and light emission properties of nanocrystalline FeSi2/Si formed by ion beam synthesis with a metal vapor vacuum arc ion source;Thin Solid Films;2007-08

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