Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires-Reference-Cited by-同舟云学术

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Chemical-vapour-deposition growth and electrical characterization of intrinsic silicon nanowires

Published:2009-03 Issue: Volume:159-160 Page:83-86
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Salem B.,Dhalluin F.,Baron T.,Jamgotchian H.,Bedu F.,Dallaporta H.,Gentile P.,Pauc N.,den Hertog M.I.,Rouviere J.L.,Ferret P.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Ge/Si nanowire heterostructures as high-performance field-effect transistors

2. Nanowires for Integrated Multicolor Nanophotonics

3. Moore's law lives on [CMOS transistors]

4. Quantum effects and single-electron charging effects in nano-scale silicon MOSFETs at room temperature

5. Fundamental aspects of VLS growth

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1. Advanced VLS growth of gold encrusted silicon nanowires Mediated by porous Aluminium Oxide template;Vacuum;2021-03

2. High-performance integrated field-effect transistor-based sensors;Analytica Chimica Acta;2016-04

3. Radial growth of slanting-columnar nanocrystalline Si on Si nanowires;Chemical Physics Letters;2011-10

4. Synthesis of indium-catalyzed Si nanowires by hot-wire chemical vapor deposition;Materials Letters;2011-08

5. Study of CVD nanowire high-k metal interface quality for interconnect level MOS devices;Microelectronic Engineering;2011-07

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