Boron doping of silicon rich carbides: Electrical properties-Reference-Cited by-同舟云学术

Boron doping of silicon rich carbides: Electrical properties

Published:2013-05 Issue:9 Volume:178 Page:551-558
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Summonte C.,Canino M.,Allegrezza M.,Bellettato M.,Desalvo A.,Shukla R.,Jain I.P.,Crupi I.,Milita S.,Ortolani L.,López-Conesa L.,Estradé S.,Peiró F.,Garrido B.

Funder

European Community's FP7

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Silicon quantum dot nanostructures for tandem photovoltaic cells

2. Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications

3. Classification and control of the origin of photoluminescence from Si nanocrystals

4. Fundamental temperature-dependent properties of the Si nanocrystal band gap

5. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

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