Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode-Reference-Cited by-同舟云学术

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Photosensitive and temperature-dependent I–V characteristics of p-NiO film/n-ZnO nanorod array heterojunction diode

Published:2014-05 Issue: Volume:184 Page:44-48
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Long Hao,Ai Lei,Li Songzhan,Huang Huihui,Mo Xiaoming,Wang Haoning,Chen Zhao,Liu Yuping,Fang Guojia

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. Fabrication and characterization of ZnO nanowires based UV photodiodes

2. A Self-Powered ZnO-Nanorod/CuSCN UV Photodetector Exhibiting Rapid Response

3. Hierarchical SnO2 Nanoparticle-ZnO Nanorod Photoanode for Improving Transport and Life Time of Photoinjected Electrons in Dye-Sensitized Solar Cell

4. Field-effect transistor based on ZnO nanorods with a variable threshold cutoff voltage

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3. Flexible ultraviolet photosensors based on p-NiO/n-Zn(1−x) Sn(x)O heterojunction with an ZnO interfacial layer that works in self regime mode;Sensors and Actuators A: Physical;2023-05

4. High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector;Sensors;2023-03-02

5. Effect of swift heavy ion irradiation on the electrical characteristics of oxide-based heterojunction;Metal Oxide Defects;2023

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