Electrical characterization of TiSi/Si1−x−yGexCy Schottky diodes-Reference-Cited by-同舟云学术

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Electrical characterization of TiSi/Si1−x−yGexCy Schottky diodes

Published:2004-12 Issue: Volume:114-115 Page:218-222
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Saha A.R.,Chattopadhyay S.,Maiti C.K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of Al/p–Ge and Al/Methyl Green/p–Ge diodes;Philosophical Magazine;2015-05-18

2. Electrical characterisation of ruthenium Schottky contacts on n-Ge (100);Physica B: Condensed Matter;2012-05

3. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100);Journal of Alloys and Compounds;2012-02

4. Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes;Journal of the Korean Physical Society;2010-12-15

5. Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100);Journal of Alloys and Compounds;2010-03

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