Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method-Reference-Cited by-同舟云学术

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Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method

Published:2004-08 Issue:1 Volume:111 Page:36-39
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Chen Z.Z,Qin Z.X,Hu C.Y,Hu X.D,Yu T.J,Tong Y.Z,Ding X.M,Zhang G.Y

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

3. Microstructure, electrical properties, and thermal stability of Al ohmic contacts to n-GaN

4. Ohmic contacts to n-type GaN using Pd/Al metallization

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1. The illuminance and temperature distribution degradation of high power GaN LED caused by detachment of multilayer electrode;Optical and Quantum Electronics;2018-11-20

2. Recent Advances in β-Ga2O3–Metal Contacts;Nanoscale Research Letters;2018-08-22

3. Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes;Superlattices and Microstructures;2017-11

4. Au-free ohmic Ti/Al/TiN contacts to UID n-GaN fabricated by sputter deposition;Journal of Applied Physics;2017-02-14

5. Pd/In/Ni/Au contact to N-polar n-type GaN fabricated by laser lift-off;Applied Physics A;2015-02-06

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