Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors-Reference-Cited by-同舟云学术

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Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors

Published:2006-06 Issue:1-3 Volume:130 Page:273-276
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Wen-Chen Zheng,Xiao-Xuan Wu,Qing Zhou,Lv He

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Visible photoluminescence of Zn‐doped CuAlS2

2. Ternary Chalcopyrite Semiconductor: Growth, Electronic Properties and Applications;Shay,1975

3. Second harmonic generation and infrared mixing in AgGaSe2

4. Site preference for Mn substitution in spintronicCuMIIIX2VIchalcopyrite semiconductors

5. Theory of the band-gap anomaly inABC2chalcopyrite semiconductors

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1. Exchange charge model of crystal field for 3d ions;Optical Properties of 3d-Ions in Crystals: Spectroscopy and Crystal Field Analysis;2013

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