The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Semiconductor near-ultraviolet photoelectronics
2. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
3. Photoconductor gain mechanisms in GaN ultraviolet detectors
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1. Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice;Journal of the Korean Physical Society;2017-06
2. AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer;Chinese Optics Letters;2013
3. Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2010-10
4. Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2008-12-19
5. Characterization of Mg-Doped AlInN Annealed in Nitrogen and Oxygen Ambients;Journal of Electronic Materials;2008-06-17
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