A study on mobility degradation in nMOSFETs with HfO2 based gate oxide
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. New method for the extraction of MOSFET parameters
2. Charge accumulation and mobility in thin dielectric MOS transistors
3. Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides
4. International Technology Roadmap for Semiconductors, http://www.itrs.net/.
5. The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs
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