Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect-Reference-Cited by-同舟云学术

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Switching fatigue of ferroelectric layered-perovskite thin films: temperature effect

Published:2005-04 Issue:1-3 Volume:118 Page:225-228
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Yuan G.L.,Liu J.-M.,Baba-Kishi K.,Chan H.L.W.,Choy C.L.,Wu D.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Electronic domain pinning in Pb(Zr,Ti)O3thin films and its role in fatigue

2. Reversible and irreversible polarization processes in ferroelectric ceramics and thin films

3. Size effect and fatigue mechanism in ferroelectric thin films

4. Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films

5. Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12

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1. Imprint effect on energy storage performance of Aurivillius Bi3TaTiO9 thin films;Journal of Materials Research and Technology;2022-09

2. Robust domain variants and ferroelectric property in epitaxial BiFeO3 films;Materials Research Express;2020-12-30

3. On ferroelectric domain polarization switching mechanism subject to an external electric field by simulations with the phase-field method;Science China Technological Sciences;2013-02-07

4. Tilley-Zeks Model in Switching Phenomena of Ferroelectric Films;Ferroelectrics;2009-06-30

5. V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films;Materials Letters;2008-06

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