Nitride-based HFETs with carrier confinement layers-Reference-Cited by-同舟云学术

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Nitride-based HFETs with carrier confinement layers

Published:2004-07 Issue:2 Volume:110 Page:172-176
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Su Y.K,Chang S.J,Kuan T.M,Ko C.H,Webb J.B,Lan W.H,Cherng Y.T,Chen S.C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. GaAs FET RF switches

2. Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements

3. Modeling and design of GaAs MESFET control devices for broad-band applications

4. AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2 gate oxide

5. Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate;Chinese Physics B;2015-04-30

2. ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFETs) WITH AND WITHOUT Mg-DOPED CARRIER CONFINEMENT LAYER;International Journal of Nanoscience;2010-08

3. AlN/AlGaN/GaN/AlGaN multilayer heterostructures with quantum well channel on heat conducting substrates for power microwave transistors;physica status solidi (c);2009-01-14

4. Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer;Japanese Journal of Applied Physics;2008-04-25

5. Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system;Semiconductors;2007-09

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